发明名称 |
VTS insulated gate bipolar transistor |
摘要 |
<p>In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift region that adjoins a top surface of the buffer layer, and a body region. The body region separates the first region from the drift region. First and second dielectric regions respectively adjoin opposing lateral sidewall portions of the drift region. The dielectric regions extend in a vertical direction from at least just beneath the body region down at least into the buffer layer. First and second field plates are respectively disposed in the first and second dielectric regions. A trench gate that controls forward conduction is disposed above the dielectric region adjacent to and insulated from the body region.
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申请公布号 |
EP2482323(A3) |
申请公布日期 |
2012.12.12 |
申请号 |
EP20120165161 |
申请日期 |
2009.12.18 |
申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
PARTHASARATHY, VIJAY;BANERJEE, SUJIT |
分类号 |
H01L29/739;H01L21/263;H01L29/32;H01L29/40;H01L29/66;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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