Light emitting diode with a multi-layer contact structure

摘要

A light emitting device includes a light emitting structure (120) comprising a first conductive type semiconductor layer (122), an active layer (124) and a second conductive type semiconductor layer (126), wherein the active layer (124) comprises well- and barrier layers alternatively stacked at least once; a multi-layer contact (200) disposed on at least a predetermined region of the second conductive type semiconductor layer (126), the multi-layer contact (200) comprising at least one layer pair of a first layer comprising InGaN having a first dopant and a second layer comprising GaN having a second dopant; and a first electrode (195) and a second electrode (190) to provide currents to the first and second conductive type semiconductor layer, respectively.