发明名称 |
THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME |
摘要 |
PURPOSE: A thin film transistor, a manufacturing method thereof, and an organic light emitting device including the same are provided to reduce leakage current by simultaneously etching source and drain electrodes to remove residual metal catalyst. CONSTITUTION: A buffer layer is formed on a substrate. A semiconductor layer is formed on the buffer layer. A gate insulating pattern(141) is formed on the semiconductor layer. A gate electrode is formed n the gate insulating pattern. An inter-layer insulating film includes contactors(161,162), and opening parts(163,164).
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申请公布号 |
KR20120134793(A) |
申请公布日期 |
2012.12.12 |
申请号 |
KR20110053957 |
申请日期 |
2011.06.03 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
PARK, BYOUNG KEON;PARK, JONG RYUK;LEE, TAK YOUNG;SEO, JIN WOOK;LEE, KI YONG;NA, HEUNG YEOL |
分类号 |
H01L29/786;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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