发明名称 |
METHOD OF PLASMA DOPING USING PLASMA DOPING APPARATUS |
摘要 |
PURPOSE: A plasma doping method using a plasma doping device is provided to increase doping concentration in a p-type polygate by ionizing boron using BF3 gas before doping with the polygate. CONSTITUTION: A doping object is loaded on a platen. Doping cycles(C11-C14) having plasma doping are performed on the doping object. Intermediate cycles(C21-C24) are repeatedly performed between the doping cycles. RF power having a first size and a negative DC pulse are applied during the doping cycle. The RF power supply is stopped after applying RF power having a second size in the intermediate cycle. [Reference numerals] (AA) RF power; (BB,DD) Time; (CC) DC pulse
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申请公布号 |
KR20120134372(A) |
申请公布日期 |
2012.12.12 |
申请号 |
KR20110053234 |
申请日期 |
2011.06.02 |
申请人 |
SK HYNIX INC. |
发明人 |
JOO, YOUNG HWAN;JIN, SEUNG WOO;LEE, AN BAE;JANG, IL SIK;CHA, JAE CHUN |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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