发明名称 METHOD OF PLASMA DOPING USING PLASMA DOPING APPARATUS
摘要 PURPOSE: A plasma doping method using a plasma doping device is provided to increase doping concentration in a p-type polygate by ionizing boron using BF3 gas before doping with the polygate. CONSTITUTION: A doping object is loaded on a platen. Doping cycles(C11-C14) having plasma doping are performed on the doping object. Intermediate cycles(C21-C24) are repeatedly performed between the doping cycles. RF power having a first size and a negative DC pulse are applied during the doping cycle. The RF power supply is stopped after applying RF power having a second size in the intermediate cycle. [Reference numerals] (AA) RF power; (BB,DD) Time; (CC) DC pulse
申请公布号 KR20120134372(A) 申请公布日期 2012.12.12
申请号 KR20110053234 申请日期 2011.06.02
申请人 SK HYNIX INC. 发明人 JOO, YOUNG HWAN;JIN, SEUNG WOO;LEE, AN BAE;JANG, IL SIK;CHA, JAE CHUN
分类号 H01L21/265 主分类号 H01L21/265
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