SUPERLUMINESCENT DIODE, MANUFACTURING METHOD OF THE SAME, AND WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER USED THE SAME
摘要
<p>PURPOSE: A super luminescent diode, a manufacturing method thereof, and a wavelength-tunable external resonance laser including the same are provided to minimize parasitic capacitance between an active layer and a pad using a flat layer of a polyimide material. CONSTITUTION: An active waveguide(30) is formed in an active region(12) on a substrate(10). A junction waveguide(50) is formed at an optical mode changing region(14) A flat layer(40) includes polyimide or a polymer BCB(benzocyclobutene). A first pad(44) can be arranged on the top of the flat layer. The first pad is connected to an upper electrode(42) on the active waveguide. The flat layer minimizes the parasitic capacitance between the first pad and the active waveguide. The active waveguide generates laser light with currents which are applied to an upper electrode and the first pad.</p>
申请公布号
KR20120134347(A)
申请公布日期
2012.12.12
申请号
KR20110053198
申请日期
2011.06.02
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
OH, SU HWAN;YOON, KI HONG;KIM, KI SOO;KWON, O KYUN;KWON, OH KEE;CHOI, BYUNG SEOK;KIM, JONG BAE