SEMICONDUCTOR STRUCTURE INTEGRATED SUPERJUNCTION MOSFET AND DIODE, AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A semiconductor structure and a forming method thereof are provided to improve performance by reducing leakage of schottky diodes. CONSTITUTION: A trench(120) is expanded to a semiconductor layer. A conductive layer(106) of a second conductivity type lines sidewalls and bottom of each trench. The conductive layer of the second conductivity type forms the semiconductor layer and PN junctions. A plurality of first trenches is arranged in a field effect transistor region. Gate electrodes(114) are separated from a body region and source regions. [Reference numerals] (AA) FET region; (BB) Schottky region