| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which ensures stable rewrite operation by changing a resistance state for sure without enlarging a memory cell area and chip area. SOLUTION: In a variable resistance element 1, the resistance is reduced by applying voltage so that a current whose absolute value is Is or more flows from a terminal 1a to a terminal 1b, and the resistance is increased by applying voltage so that a current whose absolute value is Ir or more flows from a terminal 1b to a terminal 1a. When Ir<Is, a P-channel MOS transistor is connected to the terminal 1b. On the other hand, when current directions for reducing or increasing the resistance are opposite to the above directions, a N-channel MOS transistor is connected to the terminal 1b. COPYRIGHT: (C)2010,JPO&INPIT |
