| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing solution containing solid abrasive grains to be used in barrier CMP for polishing a barrier layer made of a barrier metal material, which can obtain an excellent polishing speed for the barrier layer and can arbitrarily control the polishing speed of an insulating film. Ž<P>SOLUTION: The polishing solution for polishing a barrier layer of a semiconductor integrated circuit contains a compound having colloidal silica having a surface indicating a positive ζ potential and a carboxylic group, a corrosion inhibitor and a surfactant, wherein pH is 2.5-5.0. Ž<P>COPYRIGHT: (C)2008,JPO&INPIT Ž |
