METHOD FOR TREATING A TEMPORARILY BONDED PRODUCT WAFER

摘要

A method for treatment of a product wafer temporarily bonded on a carrier wafer with the following steps: grinding and/or backthinning of the product wafer on one flat side facing away from the carrier wafer to a product wafer thickness D of <150 μm, especially <100 μm, preferably <75 μm, even more preferably <50 μm, especially preferably <30 μm, surface treatment of the flat side with means for reducing an especially structural intrinsic stress of the product wafer.