| 发明名称 |
Method for detecting embedded voids in a semiconductor substrate |
| 摘要 |
<p>The present invention is related to a method for detecting embedded voids present in a structure formed in or on a semiconductor substrate, the method comprising the steps of:
- performing at least one processing step P 1 for forming said structure;
- measuring the mass M 1 of the substrate;
- performing a thermal treatment;
- measuring the mass M 2 of the substrate;
- calculating the mass difference between the mass of the substrate measured before and after said performed thermal treatment; and
- deducing the presence of embedded voids in said structure by comparing said mass difference with a pre-determined value.</p> |
| 申请公布号 |
EP2533276(A1) |
申请公布日期 |
2012.12.12 |
| 申请号 |
EP20110168942 |
申请日期 |
2011.06.07 |
| 申请人 |
IMEC |
发明人 |
LEUNISSEN, LEONARDUS;HALDER, SANDIP;BEYNE, ERIC |
| 分类号 |
H01L21/768;H01L21/288;H01L21/66 |
主分类号 |
H01L21/768 |
| 代理机构 |
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