发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which regulates increase of chip area and enables nonselective processing of a defective block. <P>SOLUTION: A memory array including memory mats 10 to 60 is allocated in a U shape, and a logic circuit 92 and analog circuit 91 are arranged in a space area in which the memory array is not allocated. Therefore, power supply voltages and signals can be easily handled between a peripheral circuit such as the analog circuit 91 and logic circuit 92 and a pad zone such as power pads 101 and data pads 100. Moreover, the analog circuit 91 is close to the power pads 101, thereby enabling: regulation of voltage drop due to resistance of power wiring; and separation of power wiring 102 for a charge pump and power wiring 103 for the peripheral circuit in the vicinity of the power pads 101. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP5094941(B2) 申请公布日期 2012.12.12
申请号 JP20100226419 申请日期 2010.10.06
申请人 发明人
分类号 G11C29/12;G11C17/00 主分类号 G11C29/12
代理机构 代理人
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