发明名称 |
Semiconductor device and method for making the same |
摘要 |
In one embodiment of the present invention, a field effect transistor device is provided. The field effect transistor device comprises an active area, including a first semiconductor material of a first conductivity type. A channel region is included within the active area. A gate region overlays the channel region, and the first source/drain region and the second source/drain region are embedded in the active area and spaced from each other by the channel region. The first source/drain region and the second source/drain region each include a second semiconductor material of a second conductivity type opposite of the first conductivity type. A well-tap region is embedded in the active area and spaced from the first source/drain region by the channel region and the second source/drain region. The well-tap region includes the second semiconductor material of the first conductivity type. The first source/drain region and the second source/drain region and the well-tap region are epitaxial deposits.
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申请公布号 |
US8329568(B1) |
申请公布日期 |
2012.12.11 |
申请号 |
US20100772969 |
申请日期 |
2010.05.03 |
申请人 |
AHN JAE-GYUNG;KIM MYONGSEOB;YEH PING-CHIN;WU ZHIYUAN;COOKSEY JOHN;XILINX, INC. |
发明人 |
AHN JAE-GYUNG;KIM MYONGSEOB;YEH PING-CHIN;WU ZHIYUAN;COOKSEY JOHN |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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