| 摘要 |
PURPOSE: A vanadium dioxide with a single metal-insulator transition phase boundary is provided to adjust a relative ratio of an insulator domain and a metal domain. CONSTITUTION: A vanadium dioxide has a single metal-insulator transition phase boundary. When the vanadium is in metal state, the electric resistance is increased according to temperature increase. A transition of the vanadium dioxide to a metal-insulator is provoked by an electric field. The vanadium dioxide is manufactured in one or more forms selected from a monocrystal form, a polycrystal form, a thin film form, and a nanoform. The vanadium dioxide is manufactured by using vacuum-self-flux evaporation. The vanadium dioxide includes impurities. The impurities are one or more selected from a group consisting of chrome (Cr), tungsten (W), aluminum (Al), iron (Fe), molybdenum (Mo), niobium (Nb), tantalum (Ta), antimony (Sb) and copper (Cu).
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