发明名称 Image sensor formed by silicon rich oxide material
摘要 An image sensor includes a light-sensing element, a first transistor, and a second transistor. The light-sensing element has a first end and a second end electrically connected to a select line. The first transistor has a first end electrically connected to a first control line, a control end electrically connected to the first end, and a second end electrically connected to the first end of the light-sensing element. The second transistor has a first end electrically connected to a voltage source, a control end electrically connected to the first end of the light-sensing element, and a second end electrically connected to an output line. The light-sensing element uses the material of silicon rich oxide so that the light-sensing element can sense the luminance variance and have the characteristic of the capacitor for the level boost.
申请公布号 US8330091(B2) 申请公布日期 2012.12.11
申请号 US20090561277 申请日期 2009.09.17
申请人 CHUANG MING-HUNG;AU OPTRONICS CORP. 发明人 CHUANG MING-HUNG
分类号 H01J40/14;H01L27/00 主分类号 H01J40/14
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