Method for programming nonvolatile memory device

摘要

A method programs a nonvolatile memory device to program memory cells from one or more first logic states to two or more second logic states. In the method, a number of program voltages are provided to a selected word line, and verify voltages corresponding to the second logic states are provided to the selected word line. The number of the program voltages provided to the selected word line varies according to the threshold voltage difference between each of the first logic states and each of the second logic states.