| 发明名称 |
Method of fabricating a charge trap NAND flash memory device |
| 摘要 |
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a charge trap NAND flash memory device. |
| 申请公布号 |
US8329545(B1) |
申请公布日期 |
2012.12.11 |
| 申请号 |
US20080346363 |
申请日期 |
2008.12.30 |
| 申请人 |
MEOTTO UMBERTO M.;ALBINI GIULIO;TESSARIOL PAOLO;BACCIAGLIA PAOLA;MARIANI MARCELLO;MICRON TECHNOLOGY, INC. |
发明人 |
MEOTTO UMBERTO M.;ALBINI GIULIO;TESSARIOL PAOLO;BACCIAGLIA PAOLA;MARIANI MARCELLO |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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