发明名称 |
Cap removal in a high-k metal gate electrode structure by using a sacrificial fill material |
摘要 |
Dielectric cap layers of sophisticated high-k metal gate electrode structures may be efficiently removed on the basis of a sacrificial fill material, thereby reliably preserving integrity of a protective sidewall spacer structure, which in turn may result in superior uniformity of the threshold voltage of the transistors. The sacrificial fill material may be provided in the form of an organic material that may be reduced in thickness on the basis of a wet developing process, thereby enabling a high degree of process controllability. |
申请公布号 |
US8329526(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20100905655 |
申请日期 |
2010.10.15 |
申请人 |
HEINRICH JENS;SELIGER FRANK;RICHTER RALF;LENSKI MARKUS;GLOBALFOUNDRIES INC. |
发明人 |
HEINRICH JENS;SELIGER FRANK;RICHTER RALF;LENSKI MARKUS |
分类号 |
H01L21/336;H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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