| 摘要 |
<p>PURPOSE: A manufacturing method for a semiconductor device is provided to improve current characteristics by simultaneously performing a fluorine ion injection process and a high pressure thermal process for a channel region of the semiconductor device. CONSTITUTION: Provided is a substrate(100) including an NMOS(N-channel metal oxide semiconductor) region and a PMOS(P-channel metal oxide semiconductor) region. Fluorine(F) ion is injected into an upper side of the substrate. A first gate electrode of the NMOS region and a second gate electrode of the PMOS region are formed on the substrate. A source region and a drain region(107) are formed within respective adjacent substrates on both sides of a first gate electrode and a second gate electrode. High pressure heat treatment is performed using non-oxidative gas on the upper side of the substrate. [Reference numerals] (AA) NMOS region; (BB) PMOS region</p> |
