发明名称 |
Semiconductor device pad having the same voltage level as that of a semiconductor substrate |
摘要 |
A semiconductor device pad is configured to have the same voltage level as that of a semiconductor substrate. The pad includes a semiconductor substrate having a junction area doped with a high concentration of impurity ions, a polylayer portion at least a portion of which is electrically connected to the junction area and a metal layer portion electrically connected to the polylayer portion and receiving a voltage externally applied. The metal layer is configured to transfer the received voltage to the semiconductor substrate.
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申请公布号 |
US8330230(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20070828536 |
申请日期 |
2007.07.26 |
申请人 |
KIM SUNG-HOON;KIM JOUNG-YEAL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUNG-HOON;KIM JOUNG-YEAL |
分类号 |
H01L29/76;H01L29/94 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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