发明名称 |
Fabrication of through-silicon vias on silicon wafers |
摘要 |
A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.
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申请公布号 |
US8329575(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20100977060 |
申请日期 |
2010.12.22 |
申请人 |
RAJAGOPALAN NAGARAJAN;PARK JI AE;YAMASE RYAN;PATEL SHAMIK;NOWAK THOMAS;XIA LI-QUN;KIM BOK HOEN;DING RAN;BALDINO JIM;NAIK MEHUL;RAMASWAMI SESH;APPLIED MATERIALS, INC. |
发明人 |
RAJAGOPALAN NAGARAJAN;PARK JI AE;YAMASE RYAN;PATEL SHAMIK;NOWAK THOMAS;XIA LI-QUN;KIM BOK HOEN;DING RAN;BALDINO JIM;NAIK MEHUL;RAMASWAMI SESH |
分类号 |
H01L21/4763;H01L21/31;H01L21/44 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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