| 摘要 |
PURPOSE: A light emitting device is provided to improve luminous efficiency thereof by preventing currents from being concentrated on a specific area. CONSTITUTION: A light emitting structure(160) comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. An insulating layer(155) is arranged underneath the second conductivity type semiconductor layer and comes in contact with the second conductivity type semiconductor layer. An ohmic layer is arranged underneath the second conductivity type semiconductor layer and touches the second conductivity type semiconductor layer and the insulating layer. A reflecting layer(140) is arranged underneath the ohmic layer and comes in contact with the ohmic layer and the insulating layer. A metal barrier layer(130) is arranged on the second conductivity type semiconductor layer or beneath the reflecting layer and touches he second conductivity type semiconductor layer, the insulating layer, and the reflecting layer. |
