发明名称 Semiconductor memory device and operation method thereof
摘要 A semiconductor memory device includes a clock synchronizing unit for receiving a first power voltage through a first power voltage terminal, and an additional power voltage providing unit for additionally providing a second power voltage to the first power voltage terminal for a predetermined period after leaving a power down mode.
申请公布号 US8331190(B2) 申请公布日期 2012.12.11
申请号 US201113172191 申请日期 2011.06.29
申请人 YON SUN-HYUCK;PARK KEE-TEOK;HYNIX SEMICONDUCTOR INC. 发明人 YON SUN-HYUCK;PARK KEE-TEOK
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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