| 摘要 |
PURPOSE: A forming method for a titanium oxide film is provided to produce excellent leakage current characteristics by optimizing a thickness of a zirconium oxide film on a base. CONSTITUTION: An amorphous zirconium oxide film is formed. An amorphous titanium oxide film is formed by an atomic layer deposition method on an amorphous zirconium oxide film by using methylcyclocyclopentadienyl tris(dimethylamino) titanium as a titanium precursor. The amorphous titanium oxide film is crystallized with annealing at temperatures over 300°C. [Reference numerals] (AA) Dielectric constant increase caused by a Rutile phase; (BB) Relative dielectric constant of Tio; (CC,DD) Anatase crystal; (EE) The thickness of ZrO
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