发明名称 Metal precursors for semiconductor applications
摘要 Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.
申请公布号 US8329583(B2) 申请公布日期 2012.12.11
申请号 US201113094421 申请日期 2011.04.26
申请人 DUSSARRAT CHRISTIAN;L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE 发明人 DUSSARRAT CHRISTIAN
分类号 H01L21/44;C07F1/00 主分类号 H01L21/44
代理机构 代理人
主权项
地址