发明名称 |
Method for manufacturing semiconductor device using a laser annealing process |
摘要 |
An island-shaped single crystal semiconductor layer whose top surface has a plane within ±10° from a {211} plane is formed on an insulating surface; a non-single-crystal semiconductor layer is formed in contact with the top surface and a side surface of the single crystal semiconductor layer and on the insulating surface; the non-single-crystal semiconductor layer is irradiated with laser light to melt the non-single-crystal semiconductor layer, and to crystallize the non-single-crystal semiconductor layer formed on the insulating surface with use of the single crystal semiconductor layer as a seed crystal, so that a crystalline semiconductor layer is formed. A semiconductor device having an n-channel transistor and a p-channel transistor formed with use of the crystalline semiconductor layer is provided. |
申请公布号 |
US8329520(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20100750739 |
申请日期 |
2010.03.31 |
申请人 |
YAMAZAKI SHUNPEI;MIYANAGA AKIHARU;TAKAHASHI MASAHIRO;HIROHASHI TAKUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MIYANAGA AKIHARU;TAKAHASHI MASAHIRO;HIROHASHI TAKUYA |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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