发明名称 System and method of transistor switch biasing in a high power semiconductor switch
摘要 A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.
申请公布号 US8330519(B2) 申请公布日期 2012.12.11
申请号 US20100833543 申请日期 2010.07.09
申请人 LAM LUI (RAY);FUH HANCHING;SIGE SEMICONDUCTOR INC. 发明人 LAM LUI (RAY);FUH HANCHING
分类号 H03L5/00 主分类号 H03L5/00
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