发明名称 |
Methods of fabricating halftone phase shift blank photomasks and halftone phase shift photomasks |
摘要 |
Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.
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申请公布号 |
US8329363(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20100909395 |
申请日期 |
2010.10.21 |
申请人 |
JANG IL-YONG;KIM HOON;LEE HYE-KYOUNG;WOO SANG-GYUN;NAM DONG-SEOK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG IL-YONG;KIM HOON;LEE HYE-KYOUNG;WOO SANG-GYUN;NAM DONG-SEOK |
分类号 |
G03F1/32;G03F1/68;G03F1/80 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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