发明名称 |
Method of forming an alloy in an interconnect structure to increase electromigration resistance |
摘要 |
By introducing a metallic species into an exposed surface area of a copper region, the electromigration behavior of this surface area may be significantly enhanced. The incorporation of the metallic species may be accomplished in a highly selective manner so as to not unduly affect dielectric material positioned adjacent to the metal region, thereby essentially avoiding undue increase of leakage currents. |
申请公布号 |
US8329577(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US201113015293 |
申请日期 |
2011.01.27 |
申请人 |
LEHR MATTHIAS;MEYER MORITZ-ANDREAS;LANGER ECKHARD;GLOBALFOUNDRIES INC. |
发明人 |
LEHR MATTHIAS;MEYER MORITZ-ANDREAS;LANGER ECKHARD |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|