发明名称 Method of forming an alloy in an interconnect structure to increase electromigration resistance
摘要 By introducing a metallic species into an exposed surface area of a copper region, the electromigration behavior of this surface area may be significantly enhanced. The incorporation of the metallic species may be accomplished in a highly selective manner so as to not unduly affect dielectric material positioned adjacent to the metal region, thereby essentially avoiding undue increase of leakage currents.
申请公布号 US8329577(B2) 申请公布日期 2012.12.11
申请号 US201113015293 申请日期 2011.01.27
申请人 LEHR MATTHIAS;MEYER MORITZ-ANDREAS;LANGER ECKHARD;GLOBALFOUNDRIES INC. 发明人 LEHR MATTHIAS;MEYER MORITZ-ANDREAS;LANGER ECKHARD
分类号 H01L21/44 主分类号 H01L21/44
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