发明名称 |
Semiconductor device having recessed gate electrode and method of fabricating the same |
摘要 |
In a semiconductor device having a recessed gate electrode and a method of fabricating the same, a channel trench is formed in a semiconductor substrate by etching the semiconductor substrate. A first semiconductor layer is formed on the semiconductor substrate that fills the channel trench. A second semiconductor layer is formed on the first semiconductor layer, the second semiconductor layer having a lower impurity concentration than the first semiconductor layer. |
申请公布号 |
US8329539(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20060429890 |
申请日期 |
2006.05.08 |
申请人 |
HA DAE-WON;LEE KONG-SOO;LEE SUNG-SAM;LEE SANG-HYUN;SHIM MIN-YOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HA DAE-WON;LEE KONG-SOO;LEE SUNG-SAM;LEE SANG-HYUN;SHIM MIN-YOUNG |
分类号 |
H01L21/336;H01L21/8242 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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