| 摘要 |
Read and write operations of a non-volatile memory (NVM) bitcell have different optimum parameters resulting in a conflict during design of the NVM bitcell. A single bitline in the NVM bitcell prevents optimum read performance. Read performance may be improved by splitting the read path and the write path in a NVM bitcell between two bitlines. A read bitline of the NVM bitcell has a low capacitance for improved read operation speed and decreased power consumption. A write bitline of the NVM bitcell has a low resistance to handle large currents present during write operations. A memory element of the NVM bitcell may be a fuse, anti-fuse, eFUSE, or magnetic tunnel junction. Read performance may be further enhanced with differential sensing read operations. |
