| 摘要 |
PURPOSE: A pattern forming method and a resist composition are provided to form hole patterns on the basis of positive-negative conversion by using a mask on which grid patterns are arranged for forming the hole patterns. CONSTITUTION: A pattern forming method includes the following steps: a resist composition is arranged on a substrate(10) to become a resist film(40); the resist film is heated to be exposed to high energy beam; and non-exposed parts in the resist film are dissolved using an organic solvent-based developer to prepare a negative pattern. The resist composition includes a polymer compound, an acid generator, and an organic solvent. The polymer compound includes a repeating unit with acid-labile group substituted carboxylic group, and/or a repeating unit with an acid-labile group substituted hydroxyl group, or a repeating unit an oxyrane or oxetane ring. [Reference numerals] (A) Coating photoresist; (B) Exposing photoresist; (C) Developing organic solvent |
