发明名称 |
Low-impurity organosilicon product as precursor for CVD |
摘要 |
The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane. |
申请公布号 |
US8329933(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US201113205015 |
申请日期 |
2011.08.08 |
申请人 |
MAYORGA STEVEN GERARD;O'NEILL MARK LEONARD;CHANDLER KELLY ANN;AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
MAYORGA STEVEN GERARD;O'NEILL MARK LEONARD;CHANDLER KELLY ANN |
分类号 |
C07F7/04 |
主分类号 |
C07F7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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