Methods for fabricating a semiconductor device having decreased contact resistance
摘要
Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.
申请公布号
US8329519(B2)
申请公布日期
2012.12.11
申请号
US201113305449
申请日期
2011.11.28
申请人
SHI ZHONGHAI;WU DAVID;MICHAEL MARK;MICHAEL, LEGAL REPRESENTATIVE DONNA;GLOBALFOUNDRIES, INC.
发明人
SHI ZHONGHAI;WU DAVID;MICHAEL MARK;MICHAEL, LEGAL REPRESENTATIVE DONNA