发明名称 Methods for fabricating a semiconductor device having decreased contact resistance
摘要 Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.
申请公布号 US8329519(B2) 申请公布日期 2012.12.11
申请号 US201113305449 申请日期 2011.11.28
申请人 SHI ZHONGHAI;WU DAVID;MICHAEL MARK;MICHAEL, LEGAL REPRESENTATIVE DONNA;GLOBALFOUNDRIES, INC. 发明人 SHI ZHONGHAI;WU DAVID;MICHAEL MARK;MICHAEL, LEGAL REPRESENTATIVE DONNA
分类号 H01L27/12 主分类号 H01L27/12
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