发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film. |
申请公布号 |
US8329385(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20090481919 |
申请日期 |
2009.06.10 |
申请人 |
SHIOBARA EISHI;KIKUTANI KEISUKE;YAHIRO KAZUYUKI;MATSUNAGA KENTARO;OORI TOMOYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIOBARA EISHI;KIKUTANI KEISUKE;YAHIRO KAZUYUKI;MATSUNAGA KENTARO;OORI TOMOYA |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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