发明名称 |
Phase shift mask blank and phase shift mask |
摘要 |
The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film. |
申请公布号 |
US8329364(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US200913001365 |
申请日期 |
2009.06.25 |
申请人 |
IWASHITA HIROYUKI;SHISHIDO HIROAKI;KOMINATO ATSUSHI;HASHIMOTO MASAHIRO;HOYA CORPORATION |
发明人 |
IWASHITA HIROYUKI;SHISHIDO HIROAKI;KOMINATO ATSUSHI;HASHIMOTO MASAHIRO |
分类号 |
G06F1/22 |
主分类号 |
G06F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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