| 摘要 |
PURPOSE: A substrate processing apparatus and method are provided to reduce processing costs by recycling a substrate on which formation of a film whose thickness is uncontrollable is completed. CONSTITUTION: A substrate(200) is processed in a process chamber(201). A gas supply unit supplies source gas and cleaning gas forming an epitaxial film within the process chamber. A control unit(280) controls temperature and pressure within the process chamber. The control unit controls the gas supply unit to supply the cleaning gas within the process chamber when the inside of the process chamber reaches predetermined temperature and pressure.
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