| 摘要 |
PURPOSE: A manufacturing method for a semiconductor device is provided to produce a highly integrated semiconductor device by forming a dielectric film having a low leakage current without lowering a dielectric constant. CONSTITUTION: A dielectric film is formed on a semiconductor substrate(S102). A dielectric film is heat-treated(S104). An ionized gas cluster is irradiated on the dielectric film which is heat-treated(S106). A film thickness of the dielectric film is below 2nm. The gas cluster comprises a gas cluster comprising oxygen or nitrogen. [Reference numerals] (AA) Start; (BB) End; (S102) Forming a dielectric film; (S104) Thermal treatment; (S106) Irradiating a gas cluster
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