| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting element and a wafer. <P>SOLUTION: A semiconductor light-emitting element includes a substrate layer, a first semiconductor layer, a light-emitting part, and a second semiconductor layer. The substrate layer has a dislocation density of 5×10<SP POS="POST">8</SP>cm<SP POS="POST">-2</SP>or less and contains a nitride semiconductor. The first semiconductor layer is provided on the substrate layer, contains a nitride semiconductor, and has a first conductivity type. The light-emitting part is provided above the first semiconductor layer and includes a plurality of barrier layers and well layers that are provided between the adjacent plurality of barrier layers, have a smaller band gap energy than that of the plurality of barrier layers, and have a thickness thicker than that of the plurality of barrier layers. The second semiconductor layer is provided on the light-emitting part, contains a nitride semiconductor, and has a second conductivity type different from the first conductivity type. <P>COPYRIGHT: (C)2013,JPO&INPIT |
