| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high performance power MOS transistor that has switching characteristics of a power MOS transistor having low on-resistance characteristics improved more than before. <P>SOLUTION: A semiconductor chip 100 includes: a gate electrode 6 extending between a source electrode 8 formed of a finger-shaped electrode and a drain electrode 9 from one end GE1 of the finger-shaped electrode to the other end GE2, a gate lead-out electrode connected respectively with the ends GE1 and GE2 of the gate electrode 6 through a contact hole formed on an interlayer insulating film 7; a passivation film 12 coating the interlayer insulating film 7; gate connection electrodes G1 and G2 to be prats of the gate lead-out electrode exposed from an opening of the passivation film 12; and a projection electrode 25 formed at the gate connection electrodes G1 and G2. The semiconductor chip 100 is connected through the projection electrode 25 to substrate wiring 23 for low-resistance gate electrode shunt formed on a surface 201 of a BGA substrate 200. <P>COPYRIGHT: (C)2013,JPO&INPIT |
