| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with excellent heat dissipation and excellent reliability. <P>SOLUTION: A semiconductor light-emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an inorganic insulating film, a p-side wiring portion, an n-side wiring portion, and an organic insulating film. The inorganic insulating film is provided on a second surface side of the semiconductor layer and has a first via communicating with the p-side electrode and a second via communicating with the n-side electrode. The p-side wiring portion and the n-side wiring portion are provided on the inorganic insulating film. The organic insulating film is provided at least between the p-side wiring portion and the n-side wiring portion on the inorganic insulating film. An end of the p-side wiring portion at the n-side wiring portion side and an end of the n-side wiring portion at the p-side wiring portion side are on the organic insulating film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
