| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of improving light extraction efficiency with high reproductive rate. <P>SOLUTION: According to an embodiment of the present invention, there is provided a semiconductor light-emitting device comprising a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a low-refractive-index layer, and a transparent electrode. The first semiconductor layer forms a light extraction surface. The light-emitting layer is provided on the first semiconductor layer and includes an active layer. The second semiconductor layer is provided on the light-emitting layer. The low-refractive-index layer has a refractive index lower than a refractive index of the first semiconductor layer, and partially covers the light extraction surface, and a part or all of the low-refractive-index layer is embedded in the first semiconductor layer. The transparent electrode covers the light extraction surface and the low-refractive-index layer, and allows light emitted from the light-emitting layer to pass through. <P>COPYRIGHT: (C)2013,JPO&INPIT |
