| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting element and a wafer. <P>SOLUTION: A semiconductor light-emitting element includes a buffer layer, a substrate layer, a first semiconductor layer, a light-emitting part, and a second semiconductor layer. The buffer layer contains Ga<SB POS="POST">x1</SB>Al<SB POS="POST">1-x1</SB>N (0.1≤x1<0.5) formed on a sapphire or silicon substrate. The substrate layer is formed on the buffer layer, has a dislocation density of 5×10<SP POS="POST">8</SP>cm<SP POS="POST">-2</SP>or less, and contains a nitride semiconductor. The first semiconductor layer is provided on the substrate layer, contains a nitride semiconductor, and has a first conductivity type. The light-emitting part is provided above the first semiconductor layer, includes a plurality of barrier layers and a plurality of well layers that are alternately stacked. The In composition ratio of the well layers is higher than that of the barrier layers. Each thickness of the plurality of well layers is thicker than that of the plurality of barrier layers. The second semiconductor layer is provided on the light-emitting part, contains a nitride semiconductor, and has a second conductivity type. <P>COPYRIGHT: (C)2013,JPO&INPIT |
