| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern correction method of a reflective exposure mask capable of suppressing decrease of lithography margin. <P>SOLUTION: In the pattern correction method of a reflective exposure mask, when obtaining a lithography process window by irradiating a beam of exposure light on a main plane on which a pattern of a reflective exposure mask is formed, includes the steps of: obtaining a lithography process window (Wi) by irradiating the main plane with a beam of exposure light at an incident angle (θi); obtaining another lithography process window (Wi) subsequently after changing the i to i+1 until the i reaches a predetermined number N(≥2), to thereby obtain a lithography process window the incident angle of which is different from each other (S1, S2). The pattern correction method further includes the step of correcting the pattern so that the overlap of the N lithography process windows exceeds a certain value (S3). <P>COPYRIGHT: (C)2013,JPO&INPIT |
