| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize more accurate alignment than ever when patterns are drawn one layer on top of another. <P>SOLUTION: A lithography apparatus comprises: a mark position measurement part which measures plural mark positions on a substrate on which plural marks have been formed along with a first-layer pattern from the result obtained by scanning those marks with an electron beam; a correction part which corrects the amount of displacement of the N'th order component of the plural mark positions; an abnormal mark detection part which detects an abnormal mark among the corrected plural mark positions; a mark rejection part which eliminates abnormal mark positions within a prescribed number of marks out of the detected abnormal marks; an alignment calculation part which calculates alignment by using plural mark positions left behind after the abnormal mark positions within a prescribed number of marks have been eliminated; and a drawing part which draws a second-layer pattern at the aligned position. <P>COPYRIGHT: (C)2013,JPO&INPIT |
