| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change type memory device capable of preventing disturbance caused by the flowing of reverse element current at the end time of a low resistance operation. <P>SOLUTION: A voltage driver 51 starts the low resistance operation of a variable resistance element Re having its resistance value changed according to an applied voltage by changing the potential of a second common line (one of BL and SL), and a current control unit 52 controls element current flowing through the variable resistance element Re during a low resistance operation on a first common line (the other of BL and SL) side. After the passage of a period where a state is changeable to a low resistance state, the first and second common lines are potentially equalized by, for example, a short-circuit switch 54. <P>COPYRIGHT: (C)2013,JPO&INPIT |
