| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser structure capable of narrowing a current path without complicating manufacturing processes. <P>SOLUTION: A semiconductor laser structure comprises: a plurality of laser structure units 101, 103 formed by laminating (a) n-type clad layers 2, 8, (b) luminescent layers 4, 10 and (c) p-type clad layers 6, 12; a tunnel junction layer 7 consisting of a p-type conductive layer 7a and an n-type conductive layer 7b in a part of a region at a boundary between the laser structure units 101, 103; and one or both of following (1) and (2) at the boundary. (1) an n-type layer 21 contacting with the n-type clad layer 8 in a region other than the part, and having a band-gap energy being larger than that of the n-type clad layer 8, and (2) a p-type layer contacting with the p-type clad layer 6 in the region other than the part and having a band-gap energy being larger than that of the p-type clad layer 6. <P>COPYRIGHT: (C)2013,JPO&INPIT |
