| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor element capable of improving a manufacturing yield. <P>SOLUTION: A manufacturing method of a nitride semiconductor element according to an embodiment comprises the steps of: removing a substrate for growth using a first treatment material of a structure having the substrate for growth, a buffer layer which has a first uneven shape and forms a cavity from and to the substrate for growth, and a nitride semiconductor layer formed on the first uneven shape of the buffer layer after bonding a support substrate to the nitride semiconductor layer side; and forming a second uneven shape in which the first uneven shape was reflected on the nitride semiconductor layer by reducing thicknesses of the buffer layer and the nitride semiconductor layer using a second treatment material different from the first treatment material after removing the substrate for growth. <P>COPYRIGHT: (C)2013,JPO&INPIT |
