| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of simulating operation of a resistance change element which is capable of precisely providing an operation model of the resistance change element and reducing an overhead of simulation time. <P>SOLUTION: The method of simulating the operation of the resistance change element according to the present invention measures writing current (or voltage) supplied to the resistance change element such as a magnetic tunnel junction (MTJ) element at any each time increment, defines a time constant that changes at each time increment based on the writing current (voltage) described above, and simulates the operation of the resistance change element using a calculation algorithm of a circuit simulator that calculates time (writing time) required for a resistance value of the resistance change element to change using the time constant. <P>COPYRIGHT: (C)2013,JPO&INPIT |
