| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate in which semiconductor layers having thicknesses that accommodate different kind of semiconductor elements are provided on one insulating film, a method of manufacturing the same, and a semiconductor device using the same. <P>SOLUTION: A semiconductor substrate 10 having a first insulating layer 5 and a semiconductor layer 7 provided on the first insulating layer includes: a second insulating layer 13 that is selectively provided in the semiconductor layer and extends in parallel to a surface of the semiconductor layer, and of which the length in the extending direction is shorter than the length of the first insulating layer; and a third insulating layer 15 that extends from the surface of the semiconductor layer to the first insulating layer and electrically isolates a portion of the semiconductor layer including the second insulating layer with the rest of the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
