PURPOSE: A semiconductor light emitting device is provided to increase a lighting area by including an active layer which generates light through recombination of a hole and an electron. CONSTITUTION: A first semiconductor layer(330) has first conductivity. A second semiconductor layer(350) has second conductivity different from the first conductivity. An active layer is located between the first semiconductor layer and the second semiconductor layer. The active layer generates light through recombination of a hole and an electron. A first pad electrode(380) electrically contacts the first semiconductor layer.
